Crucial 16GB DDR4 2666MT/s (PC4-21300) CL19 DR x8 ECC Unbuffered DIMM 288pin

Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 3200

Tip: DDR4, Capacitate (GB): 32GB (2 x 16GB), Frecventa (MHz): 3200 MHz, Latenta CAS: CL 22, Standard: PC4-25600, Tensiune alimentare: 1.35 V

Reducere. Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 2666, Latenta CAS: CL19, Tensiune alimentare: 1.2 V

Capacitate (GB): 16 GB, Tip memorie: DDR4, Frecventa Memorie RAM (MHz): 3200 MHz, Latenta CAS: CL 22

Samsung Enterprise (M391A1K43BB2-CTD) SAMSUNG 8GB DDR4-2666 UDIMM ECC Unbuffered CL19 Single Rank

Reducere. Tip: DDR4, Capacitate (GB): 8, Frecventa (MHz): 2666, Latenta CAS: CL19, Tensiune alimentare: 1.2 V

Reducere. Tip: DDR4, Capacitate (GB): 32 GB, Frecventa (MHz): 2666 MHz, Latenta CAS: 19 CL, Tensiune alimentare: 1.2 V

Samsung Enterprise (M391A4G43MB1-CTD) SAMSUNG 32GB DDR4-2666 UDIMM ECC Unbuffered CL19 Dual Rank

Memorie GoodRam, 16GB DDR4, 2Rx8, 2666MHz, PC4-21300, MEM2666E4D816G

Capacitate (GB): 32, Tip memorie: DDR4, Frecventa Memorie RAM (MHz): 3200, Latenta CAS: CL 22, Standard: PC4-3200, Tensiune alimentare: 1.2

Capacitate (GB): 8, Tip memorie: DDR4, Frecventa Memorie RAM (MHz): 3200, Latenta CAS: CL 22

Reducere. Tip: DDR5, Capacitate (GB): 32GB (2 x 16GB), Frecventa (MHz): 5600 MHz, Latenta CAS: CL 36

Capacitate (GB): 16, Tip memorie: DDR5, Frecventa Memorie RAM (MHz): 4800 MHz

Samsung Enterprise (M391A2K43BB1-CTD) SAMSUNG 16GB DDR4-2666 UDIMM ECC Unbuffered CL17 Dual Rank

Reducere. Serie: ValueRAM, Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 2666, Latenta CAS: 19 CL, Standard: PC4-21300, Tensiune alimentare: 1.2 V

Memorie RAM Goodram, DIMM, DDR4, 16GB, 2666MHz, CL19, 1.2V

Samsung Enterprise (M393A2K40CB2-CTD) SAMSUNG 16GB DDR4-2666 RDIMM ECC Registered CL19 Single Rank

Samsung Enterprise (M393A2K43CB2-CTD) SAMSUNG 16GB DDR4-2666 RDIMM ECC Registered CL19 Dual Rank

Samsung Enterprise (M393A2K43BB1-CTD) SAMSUNG 16GB DDR4-2666 RDIMM ECC Registered CL19 Dual Rank

Reducere. Serie: ValueRAM, Tip: DDR4, Capacitate (GB): 8, Frecventa (MHz): 2666, Latenta CAS: 19 CL, Standard: PC4-21300, Tensiune alimentare: 1.2 V

Tip: DDR4, Capacitate (GB): 32, Frecventa (MHz): 2666, Latenta CAS: 19 CL, Tensiune alimentare: 1.2 V

Tip: DDR4, Capacitate (GB): 32, Frecventa (MHz): 2666, Latenta CAS: 19 CL, Radiator: Da, Tensiune alimentare: 1.2 V

KINGSTON Memorie RAM, 32GB, DIMM, DDR4, 3200Mhz, ECC

Tip: DDR4, Capacitate (GB): 32, Frecventa (MHz): 3200, Latenta CAS: CL22, Tensiune alimentare: 1.2 V

Tip: DDR4, Capacitate (GB): 64, Frecventa (MHz): 2666, Kit: 2 x 32 GB, Latenta CAS: 19 CL, Radiator: Da, Tensiune alimentare: 1.2 V

Samsung Enterprise (M386A8K40CM2-CTD) SAMSUNG 64GB DDR4-2666 LRDIMM ECC Registered CL19 Quad Rank

Samsung Enterprise (M386A8K40BM2-CTD) SAMSUNG 64GB DDR4-2666 LRDIMM ECC Registered CL19 Quad Rank

Samsung Enterprise (M393A4K40BB2-CTD) SAMSUNG 32GB DDR4-2666 RDIMM ECC Registered CL19 Dual Rank

Tip: DDR5, Capacitate (GB): 32, Frecventa (MHz): 5600, Latenta CAS: 9

Reducere. Memorie RAM Micron, DDR4, modul, 32 GB, SO-DIMM 260-pini - 3200 MHz / PC4-25600

Capacitate (GB): 32, Tip memorie: DDR5, Frecventa Memorie RAM (MHz): 4800, Latenta CAS: CL 40, Tensiune alimentare: 1.1 V

Memorie PNY Performance, DDR4, 16GB, 3200MHz, PC4-25600