UDIMM ECC 16GB DDR4 2Rx8 Hynix D 2666MHz PC4-21300 KSM26ED8/16HD

Reducere. Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 2666, Latenta CAS: CL19, Tensiune alimentare: 1.2 V

Reducere. Tip: DDR4, Capacitate (GB): 32 GB, Frecventa (MHz): 2666 MHz, Latenta CAS: 19 CL, Tensiune alimentare: 1.2 V

Reducere. Tip: DDR4, Capacitate (GB): 8, Frecventa (MHz): 2666, Latenta CAS: CL19, Tensiune alimentare: 1.2 V

Tip: DDR4, Capacitate (GB): 32, Frecventa (MHz): 3200, Latenta CAS: CL22, Tensiune alimentare: 1.2 V

Memorie GoodRam, 16GB DDR4, 2Rx8, 2666MHz, PC4-21300, MEM2666E4D816G

Samsung Enterprise (M391A2K43BB1-CTD) SAMSUNG 16GB DDR4-2666 UDIMM ECC Unbuffered CL17 Dual Rank

Capacitate (GB): 8 GB, Tip memorie: DDR4, Frecventa Memorie RAM (MHz): 3200, Latenta CAS: CL22, Tensiune alimentare: 1.2 V

Reducere. Serie: ValueRAM, Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 2666, Latenta CAS: 19 CL, Standard: PC4-21300, Tensiune alimentare: 1.2 V

Samsung Enterprise (M391A1K43BB2-CTD) SAMSUNG 8GB DDR4-2666 UDIMM ECC Unbuffered CL19 Single Rank

Samsung Enterprise (M391A4G43MB1-CTD) SAMSUNG 32GB DDR4-2666 UDIMM ECC Unbuffered CL19 Dual Rank

Reducere. Serie: ValueRAM, Tip: DDR4, Capacitate (GB): 8, Frecventa (MHz): 2666, Latenta CAS: 19 CL, Standard: PC4-21300, Tensiune alimentare: 1.2 V

Synology Network Attached Storage RackStation RS3621xs+, 12-bay, Octa Core Intel Xeon D-1541, 8 GB DDR4 ECC UDIMM, 2 x USB 3.2 gen1, 2 x Expansion ...

Memorie PNY Performance, DDR4, 16GB, 3200MHz, PC4-25600

Reducere. Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 2666, Latenta CAS: 19 CL, Standard: PC4-21300, Tensiune alimentare: 1.2 V

Memorie RAM, Silicon Power DDR4-3200 16GB DRAM DDR4 XPOWER Pulse / U-DIMM Desktop 16GBx1

Reducere. Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 3200, Latenta CAS: CL 22, Radiator: Nu, Standard: PC4-25600, Tensiune alimentare: 1.2 V

Reducere. Serie: Signature Line, Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 2666, Latenta CAS: 19 CL, Radiator: Signature, Standard: PC4-21300, Tensiun...

Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 2666, Latenta CAS: 19 CL, Standard: PC4-21300, Tensiune alimentare: 1.2 V

Serie: Aegis, Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 2666, Latenta CAS: 19 CL, Radiator: Aegis, Standard: PC4-21300, Tensiune alimentare:...

Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 2666, Kit: 2 x 8 GB, Latenta CAS: 19 CL, Tensiune alimentare: 1.2 V

Capacitate: 16 GB

Reducere. Memorie Afox 16GB (1x16GB) DDR4 2666MHz CL19

Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 3200

Reducere. Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 2666, Kit: Nu, Latenta CAS: CL19, Tensiune alimentare: 1.2 V, Altele: ECC (verificare erori): Non-...

Capacitate (GB): 16, Tip memorie: DDR4, Frecventa Memorie RAM (MHz): 2666, Latenta CAS: CL19, Tensiune alimentare: 1.2 V

Capacitate (GB): 16, Tip memorie: DDR4, Frecventa Memorie RAM (MHz): 2666

Tip: DDR4, Capacitate (GB): 16GB, Frecventa (MHz): 2666, Tensiune alimentare: 1.2V

Memorie RAM Goodram, DIMM, DDR4, 16GB, 2666MHz, CL19, 1.2V

Samsung Enterprise (M393A2K40CB2-CTD) SAMSUNG 16GB DDR4-2666 RDIMM ECC Registered CL19 Single Rank

Samsung Enterprise (M393A2K40CB2-CVF) SAMSUNG 16GB DDR4-2933 RDIMM ECC Registered CL21 Single Rank

Samsung Enterprise (M393A2K40DB3-CWE) SAMSUNG 16GB DDR4-3200 RDIMM ECC Registered CL22 Single Rank

Serie: Aegis, Tip: DDR4, Capacitate (GB): 16, Frecventa (MHz): 2666, Kit: 2 x 8 GB, Latenta CAS: 19 CL, Radiator: Aegis, Standard: PC4-21300, Tensi...

Memorie RAM Goodram DIMM DDR4 16GB 2666MHz CL119 1.2V

Samsung Enterprise (M393A2K43DB3-CWE) SAMSUNG 16GB DDR4-3200 RDIMM ECC Registered CL22 Dual Rank

Samsung Enterprise (M393A2K43CB2-CTD) SAMSUNG 16GB DDR4-2666 RDIMM ECC Registered CL19 Dual Rank